A survey of wide bandgap power semiconductor devices

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2155-2163

  Millan, Jose ^a   Godignon, Philippe ^a   Perpina, Xavier ^a   Perez Tomas, Amador ^a   Rebollo, Jose ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

BJTs; diodes; GaN; HEMTs; IGBTs; JFETs; MOSFETs; power devices; SiC; thyristors; wide bandgap (WBG) semiconductors

Indexed keywords

BJTS; GAN; HEMTS; IGBTS; JFETS; MOSFETS; POWER DEVICES; SIC; WIDE BAND GAP;

DIODES; ENERGY GAP; GALLIUM NITRIDE; MOSFET DEVICES; POWER CONVERTERS; SILICON; SILICON CARBIDE; THYRISTORS;

ELECTRIC EQUIPMENT;

EID: 84893124059     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2268900     Document Type: Article

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