Normally-off trench JFET technology in 4H silicon carbide

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 107-111

  Malhan, R K ^a   Takeuchi, Y ^a   Kataoka, M ^a   Mihaila, A P ^b   Rashid, S J ^b   Udrea, F ^b   Amaratunga, G A J ^b  

^a DENSO CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Embedded epitaxy; High temperature operation; Junction field effect transistor; Normally off; Silicon carbide

Indexed keywords

ANISOTROPY; ELECTRIC PROPERTIES; SILICON CARBIDE; THRESHOLD VOLTAGE;

EMBEDDED EPITAXY; HIGH-TEMPERATURE OPERATION; NORMALLY-OFF;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 30344471061     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.035     Document Type: Conference Paper

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