Power conversion with SiC devices at extremely high ambient temperatures

IEEE Transactions on Power Electronics

Volumn 22, Issue 4, 2007, Pages 1321-1329

  Funaki, Tsuyoshi ^a   Balda, Juan Carlos ^b   Junghans, Jeremy ^c   Kashyap, Avinash S ^b   Mantooth, H Allan ^b   Barlow, Fred ^d   Kimoto, Tsunenobu ^a   Hikihara, Takashi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b 3202 Bell Engineering Center   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d UNIVERSITY OF IDAHO   (United States)

Author keywords

Dc dc converter circuit; Device characterization; High temperature operation; Packaging; Silicon carbide (SiC) device

Indexed keywords

CIRCUIT SIMPLICITY; CONDUCTION LOSS;

HIGH TEMPERATURE EFFECTS; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DC-DC CONVERTERS;

EID: 34547102755     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.900561     Document Type: Article

References (18)

1. J. L. Hudgins, G. S. Simin, E. Santi, and M. A. Khan, "An assessment of wide bandgap semiconductors for power devices," IEEE Trans. Power Elect., vol. 18, no. 3, pp. 907-914, 2003.
2. M. Lades, "Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H-SiC," in Selected Topics of Electronics and Micromechatronics. Aachen: Shaker Verlag, 2002, vol. 3.
3. A. R. Hefner, R. Singh, J. Lai, D. Berning, S. Bouche, and C. Chapuy, "SiC power diodes provide breakthrough performance for a wide range of applications," IEEE Trans. Power Elect., vol. 16, no. 2, pp. 273-280, 2001.
4. G. Spiazzi, S. Buso, M. Citron, M. Corradin, and R. Pierobeon, "Performance evaluation of a schottky SiC power diode in a boost PFC application," IEEE Trans. Power Elect., vol. 18, no. 6, pp. 1249-1253, 2003.
5. J. Richmond, S. Ryu, M. Das, and S. Krishnaswami, "An overview of cree silicon carbide power devices," presented at the IEEE Workshop on Power Electronics in Transportation, Oct. 21-22, 2004.
6. T. R. McNutt, A. R. Hefner, H.A. Mantooth, J. Duliere, D. W. Berning, and R. Singh, "Silicon carbide PiN and merged PiN Schottky power diode models implemented in the saber circuit simulator," IEEE Trans. Power Elect., vol. 19, no. 3, pp. 573-581, 2004.
7. A. M. Abou-Alfotouh, A. V. Radun, H. R. Chang, and C. Winterhalter, "A 1-MHz hard-switched silicon carbide DC-DC converter," IEEE Trans. Power Elect., vol. 21, no. 4, pp. 880-889, 2006.
8. D. B. Slater, L. A. Lipkin, G. M. Johnson, A. V. Suvorov, and J. W. Palmour:, "High temperature enhancement-mode NMOS and PMOS devices and circuits in 6H-SiC," 53rd Device Research Conf., pp. 100-101, Jun. 19-21, 1995.
9. J. B. Casady, W. C. Dillard, R. W. Johnson, and U. Rao, "A hybrid 6H-SiC temperature sensor operational from 25 °C to 500 °C," IEEE Trans. Compon., Packaging, and Manufacturing Technology, vol. 19, no. 3, pp. 16-422, 1996.
10. C. J. Scozzie, C. W. Tipton, W. M. DeLancey, J. M. McGarrity, and F. B. McLean, "High temperature stressing of SiC JFETs at 300 °C," in Proc. 32nd Int. Reliability Physics Symp., Apr. 11-14, 1994, pp. 351-358.
11. B. Ray and R. L. Spyker, "High temperature design and testing of a DC-DC power converter with Si and SiC devices," in Proc. 39th IEEE Industry Applications Society Annu. Meeting, Seattle, WA, Oct. 3-7, 2004, 33p5.
12. B. Ray, J. D. Scofield, R. L. Spyker, B. Jordan, and S. H. Ryu, "High temperature operation of a DC-DC power converter utilizing SiC power devices," presented at the 20th IEEE Applied Power Electronics Conf., Austin, TX, Mar. 6-10, 2005, Session 8.2.
13. M. S. Chinthavali, B. Ozpineci, and L. M. Tolbert, "High temperature characterization of SiC power electronic devices," presented at the 2004 IEEE Workshop on Power Electronics in Transportation, Oct. 21-22, 2004, Sheraton Detroit Novi, Detroit, MI.
14. R. L. Kelley, M. S. Mazzola, W. A. Draper, and J. Casady, "Inherently safe DC/DC converter using a normally-on SiC JFET," in Proc. 20th IEEE Applied Power Electronics Conf., Mar. 6-10, 2005, pp. 1561-1565.
15. B. Ozpineci and L. M. Tolbert, "Characterization of SiC schottky diodes at different temperatures," IEEE Power Elect. Lett., vol. 1, no. 2, pp. 54-57, 2003.
16. J. HornbergerE. S. CilioR. M. SchupbachH. A. Mantooth,A. B. Lostetter, "A high-temperature multichip power module (MCPM) inverter utilizing silicon carbide (SiC) and silicon on insulator (SOI) electronics," in Proc. IEEE 37th Annu. Power Electronics Specialists Conf., Jeju, Korea, Jun. 18-22, 2006, pp. 9-15, (Plenary Session1-2).
17. P. Friedrchs, H. Mitlehner, R. Kaltschmidt, U. Weinert, W. Bartsch, C. Hech, K. O. Dohnke, B. Weis, and D. Stephani, "Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories," Mat. Sci. Forum, vol. 338-342, pp. 1243-1246, 2000.
18. P. Friedrchs, H. Mitlehner, R. Schorner, K. O. Dohnke, R. Elpelt, and D. Stephani, "Application-Oriented unipolar switching SiC devices," Mat. Sci. Forum, vol. 389-393, pp. 1185-1190, 2000.