Reliability investigation of SiC bipolar device module in long time inverter operation

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 233-236

  Tanaka, A ^a   Ogata, S ^a   Izumi, T ^a   Nakayama, K ^a   Hayashi, T ^a   Miyanagi, Y ^a   Asano, K ^a  

^a KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-TO-BACK SYSTEM; BIPOLAR DEVICE; DC-BUS VOLTAGES; GATE TURN-OFF THYRISTORS; INVERTER OPERATIONS; OUTPUT POWER; PIN DIODE; RELIABILITY INVESTIGATIONS; SIC SUBSTRATES; THREE-PHASE INVERTER;

ELECTRIC SWITCHGEAR; RELIABILITY; SEMICONDUCTOR DIODES;

SILICON CARBIDE;

EID: 84864772318     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229066     Document Type: Conference Paper

References (7)

1. Y. Sugawara, S. Ogata, T. Izumi, K. Nakayama, Y. Miyanagi, K. Asano, A. Tanaka, S. Okada and R. Ishii, "Development of a 100kVA SiC Inverter with High Overload Capability of 300kVA," Proceedings of 21th ISPSD, pp.331-334 (2009).
2. H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P.A. Nilsson, J.P. Bergman and P. Skytt, "Long Term Operation of 4.5 kV PiN and 2.5 kV JBS Diodes," Materials Science Forum Vols. 353-356, pp.727-730 (2001).
3. H. Tsuchida, T. Miyanagi, I. Kamata, T. Nakamura, K. Izumi, K. Nakayama, R. Ishii, K. Asano and Y. Sugawara, "Investigation of Basal Plane Dislocation in the 4H-SiC Epilayers Grown on {0001} Substrates," Materials Science Forum Vols. 483-485, pp.97-100 (2005).
4. Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour and S. Ogata, "12.7kV Ultara High Voltage SiC Commutated Gate Turn-off Thyristor," Proceedings of 16th ISPSD, pp.365-368 (2004).
5. Y. Sugawara, K. Asano, R. Singh and J. Palmour, "6.2 kV 4H-SiC pin Diode with Low Forward Voltage Drop," Materials Science Forum Vols. 338-342, pp.1371-1374 (2000).
6. K. Asano, Y. Sugawara, A. Tanaka, Y. Miyanagi, K. Nakayama, S. Ogata, T. Izumi and R. Ishii, "Heavily Electron-irradiated High Resistive 4H-SiC pin diode for Turn-on Snubber of 200kVA Class High Power SiCGT Inverter," Proceedings of 20th ISPSD, pp.256-259 (2008).
7. K. Asano, K. Nakayama, Y. Miyanagi, A. Tanaka, M. Nishimura, T. Izumi, S. Ogata and T. Hayashi, "Lifetime Control of 4.5 kV SiCGT by High-energy Electron Irradiation," Materials Science Forum Vols. 679-680, pp.718-721 (2011).