AlGaN/GaN HEMTs passivated by Cat-CVD SiN Film

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 545-547

  Oku, Tomoki ^a   Kamo, Yoshitaka ^a   Totsuka, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

AlGaN GaN HEMT; Catalytic chemical vapor deposition

Indexed keywords

CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SILICON NITRIDE;

CAT-CVD TECHNIQUE; CATALYTIC CHEMICAL VAPOR DEPOSITION; SURFACE PASSIVATION;

THIN FILMS;

EID: 36749083413     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.223     Document Type: Article

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