Record breakdown voltage (2200 V) of GaN DHFETs on Si with 2-μm buffer thickness by local substrate removal

IEEE Electron Device Letters

Volumn 32, Issue 1, 2011, Pages 30-32

  Srivastava, Puneet ^a,b   Das, Jo ^a   Visalli, Domenica ^a,b   Van Hove, Marleen ^a   Malinowski, Pawel E ^a,b   Marcon, Denis ^a,b   Lenci, Silvia ^a   Geens, Karen ^a   Cheng, Kai ^a   Leys, Maarten ^a   Decoutere, Stefaan ^a   Mertens, Robert P ^a,b   Borghs, Gustaaf ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

AlGaN GaN AlGaN; breakdown voltage; double heterostructure FETs (DHFETs); Hall measurement; local Si substrate removal; MOCVD

Indexed keywords

ALGAN/GAN/ALGAN; BREAKDOWN VOLTAGE; DOUBLE HETEROSTRUCTURES; HALL MEASUREMENTS; MOCVD; SI SUBSTRATES;

ELECTRIC BREAKDOWN; ELECTRON GAS; GALLIUM NITRIDE; MESFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 78650911175     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2089493     Document Type: Conference Paper

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