A high-temperature SiC three-phase AC-DC converter design for >100 ̂c ambient temperature

IEEE Transactions on Power Electronics

Volumn 28, Issue 1, 2013, Pages 555-572

  Wang, Ruxi ^a   Boroyevich, Dushan ^a   Ning, Puqi ^b   Wang, Zhiqiang ^c   Wang, Fei ^b,c   Mattavelli, Paolo ^a   Ngo, Khai D T ^a   Rajashekara, Kaushik ^d  

^a State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

^d ROLLS ROYCE CORPORATION   (United States)

Author keywords

Harsh environment; high temperature (HT) converter; silicon carbide JFET; silicon on insulator (SOI) technology

Indexed keywords

AC-DC CONVERTERS; CONTROL ELECTRONICS; DETAILED DESIGN; GATE DRIVES; HARSH ENVIRONMENT; HIGH TEMPERATURE; HYBRID ELECTRICAL VEHICLE; PASSIVE COMPONENTS; PETROLEUM EXPLORATION; PLANAR STRUCTURE; POWER MODULE; SILICON ON INSULATOR; SILICONON-INSULATOR TECHNOLOGY (SOI); THREE-PHASE PWM RECTIFIERS;

ELECTRIC VEHICLES; GALLIUM NITRIDE; INDUSTRIAL APPLICATIONS; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE;

SILICON CARBIDE;

EID: 84866495917     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2199131     Document Type: Article

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