Evaluation of a 1200-V, 800-A all-SiC dual module

IEEE Transactions on Power Electronics

Volumn 26, Issue 9, 2011, Pages 2504-2511

  Wood, Robert A ^a   Salem, Thomas E ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNITED STATES NAVAL ACADEMY   (United States)

Author keywords

Electric vehicles; high power; inverter; MOSFET; silicon carbide (SiC)

Indexed keywords

CURRENT-SHARING; DC-AC INVERTERS; DUAL POWER; EXPERIMENTAL CHARACTERIZATION; EXPERIMENTAL DATA; FULL-BRIDGE; HIGH-CURRENT; HIGH-POWER; HIGH-POWER SWITCHES; INVERTER; INVERTER LOSS; JUNCTION BARRIER SCHOTTKY DIODES; JUNCTION TEMPERATURES; MATERIAL PROPERTY; MOS-FET; MOSFETS; MULTIPLE GATES; OPERATING CONDITION; OUTPUT CURRENT; PEAK LOADING; PERFORMANCE CAPABILITY; POWER ELECTRONIC DEVICES; REVERSE CONDUCTION; SI TECHNOLOGY; SIMULATION STUDIES; SWITCHING ENERGY;

BRIDGE CIRCUITS; COMPUTER SIMULATION; DC POWER TRANSMISSION; ELECTRIC POWER SYSTEMS; ELECTRIC PROPERTIES; ELECTRIC VEHICLES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SILICON; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053180055     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2108670     Document Type: Article

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