High-temperature SiC power module electrical evaluation procedure

IEEE Transactions on Power Electronics

Volumn 26, Issue 11, 2011, Pages 3079-3083

  Ning, Puqi ^a   Wang, Fred ^a,b   Ngo, Khai D T ^c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b University of Tennessee   (United States)

^c VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

High temperature techniques; packaging

Indexed keywords

ELECTRICAL EVALUATIONS; FABRICATION PROCEDURE; HIGH TEMPERATURE; HIGH-TEMPERATURE DEVICES; HIGH-TEMPERATURE PACKAGING; POTENTIAL DEFECTS; POWER MODULE; SILICON CARBIDE SEMICONDUCTOR DEVICES; SYSTEMATIC TESTING; TESTING PROCEDURE;

DEFECTS; MULTICHIP MODULES; PACKAGING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 82155192320     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2151879     Document Type: Article

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