Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 257-260

  Ryu, Sei Hyung ^a   Capell, Craig ^a   Jonas, Charlotte ^a   Cheng, Lin ^a   O'Loughlin, Michael ^a   Burk, Al ^a   Agarwal, Anant ^a   Palmour, John ^a   Hefner, Allen ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

IGBT; silicon carbide; ultra high voltage

Indexed keywords

ACTIVE AREA; BLOCKING VOLTAGE; CHIP SIZES; DOPING CONCENTRATION; GATE BIAS; LATEST DEVELOPMENT; ROOM TEMPERATURE; SPECIFIC-ON-RESISTANCE; STATIC CHARACTERISTIC; SWITCHING BEHAVIORS; ULTRA HIGH VOLTAGE;

BIAS VOLTAGE; BUFFER LAYERS; ELECTRICITY; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); OPTICAL WAVEGUIDES; SEMICONDUCTOR DOPING;

SILICON CARBIDE;

EID: 84864760062     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229072     Document Type: Conference Paper

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