Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2207-2214

  Cai, Yong ^b   Zhou, Yugang ^b   Lau, Kei May ^a,b   Chen, Kevin J ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlGaN GaN; Depletion mode (D mode); Enhancement mode; Fluoride; Gate current; High electron mobility transistor (HEMT); Immobile negative charge; Plasma treatment; Post gate rapid thermal annealing (RTA); Threshold voltage

Indexed keywords

DEPLETION MODE (D-MODE); ENHANCEMENT MODE; FLUORIDE BASED PLASMA TREATMENT; GATE CURRENT; IMMOBILE NEGATIVE CHARGE; PLASMA TREATMENT; POST-GATE RAPID THERMAL ANNEALING (RTA);

ALUMINUM GALLIUM NITRIDE; ELECTRON GAS; GALLIUM NITRIDE; PLASMAS; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33947182926     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.881054     Document Type: Article

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