High-performance e-mode AlGaN/GaN HEMTs

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 428-430

  Palacios, T ^a   Suh, C S ^a   Chakraborty, A ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Enhancement mode (E mode); GaN; High electron mobility transistor (HEMT); Millimeter wave frequencies

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; MILLIMETER WAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE TREATMENT; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ENHANCEMENT MODE (E-MODE); GATE LEAKAGE; MILLIMETER-WAVE FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33744718459     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.874761     Document Type: Article

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