The 1200V direct-driven SiC JFET power switch

Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Volumn , Issue , 2011, Pages

  Siemieniec, Ralf ^a   Kirchner, Uwe ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

device simulation; IGBT; JFET; SiC; switching losses

Indexed keywords

DEVICE SIMULATIONS; DIRECT-DRIVEN; EXCELLENT PERFORMANCE; HIGH THERMAL CONDUCTIVITY; LOW LOSS; LOW-VOLTAGE; POWER DEVICES; POWER SWITCHES; SIC; SILICON CARBIDE SCHOTTKY DIODES; SILICON MOSFET; SWITCHING LOSSES; TEMPERATURE CAPABILITY; WIDE BAND GAP; WIDE-BAND-GAP SEMICONDUCTOR;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMAL CONDUCTIVITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053506114     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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