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Volumn , Issue , 2008, Pages 2885-2890

Recent progress in SiC DMOSFETs and JBS diodes at Cree

Author keywords

[No Author keywords available]

Indexed keywords

DIES; DIODES; INDUSTRIAL ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

EID: 63149095671     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IECON.2008.4758417     Document Type: Conference Paper
Times cited : (98)

References (20)
  • 1
    • 85017613569 scopus 로고    scopus 로고
    • Private communication with Dr. Allen Hefner, NIST
    • Private communication with Dr. Allen Hefner, NIST
  • 2
    • 85017649129 scopus 로고    scopus 로고
    • 10 A JBS: Brett A. Hull, Joseph J. Sumakeris, Michael J. O'Loughlin, Qingchun (Jon) Zhang, Jim Richmond, Adrian Powell, Eugene A. Imhoff, Karl D. Hobart, Angel Rivera and Allen Hefner, Performance and Stability of Large Area 4H-SiC 10 kV Junction Barrier Schottky Rectifiers, IEEE Trans. Electron Dev., In Press.
    • 10 A JBS: Brett A. Hull, Joseph J. Sumakeris, Michael J. O'Loughlin, Qingchun (Jon) Zhang, Jim Richmond, Adrian Powell, Eugene A. Imhoff, Karl D. Hobart, Angel Rivera and Allen Hefner, "Performance and Stability of Large Area 4H-SiC 10 kV Junction Barrier Schottky Rectifiers", IEEE Trans. Electron Dev., In Press.
  • 3
    • 85017623193 scopus 로고    scopus 로고
    • 2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers, Presented at the Int'l Conference on Silicon Carbide and Related Materials 2007.
    • 2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers", Presented at the Int'l Conference on Silicon Carbide and Related Materials 2007.
  • 7
    • 31844436391 scopus 로고    scopus 로고
    • Design, Fabrication, and Characterization of Low Forward Drop, Low Leakage, 1-kV 4H-SiC JBS Rectifiers
    • Lin Zhu, T. Paul Chow, Kenneth A. Jones, and Anant Agarwal, "Design, Fabrication, and Characterization of Low Forward Drop, Low Leakage, 1-kV 4H-SiC JBS Rectifiers," IEEE Trans. Electron Devices, Vol. 53, pp. 363-368,2006.
    • (2006) IEEE Trans. Electron Devices , vol.53 , pp. 363-368
    • Zhu, L.1    Paul Chow, T.2    Jones, K.A.3    Agarwal, A.4
  • 15
    • 12844250168 scopus 로고    scopus 로고
    • Anant Agarwal, Mrinal Das, Sumithra Krishnaswami, John Palmour, James Richmond, and Sei-Hyung Ryu, SiC Power Devices - An Overview, Mat. Res. Soc. Symp. Proc. 815, pp. 243-254, (2004) Materials research Society Symposium, San Francisco, California, U. S. A., April 14-15, 2004.
    • Anant Agarwal, Mrinal Das, Sumithra Krishnaswami, John Palmour, James Richmond, and Sei-Hyung Ryu, "SiC Power Devices - An Overview," Mat. Res. Soc. Symp. Proc. Vol. 815, pp. 243-254, (2004) Materials research Society Symposium, San Francisco, California, U. S. A., April 14-15, 2004.
  • 16
    • 85017655200 scopus 로고    scopus 로고
    • Anant Agarwal, Jim Richmond, Sei-Hyung Ryu, Mrinal Das, Sumi Krishnaswami and John Palmour, Latest Advances in SiC Device Technology and Practical Applications, presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 04, March 17, 2004, Monterey, California.
    • Anant Agarwal, Jim Richmond, Sei-Hyung Ryu, Mrinal Das, Sumi Krishnaswami and John Palmour, "Latest Advances in SiC Device Technology and Practical Applications," presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 04, March 17, 2004, Monterey, California.
  • 17
    • 63149135281 scopus 로고    scopus 로고
    • High Temperature Operation of SiC Power Devices
    • Jet Propulsion Laboratory, Pasedena, California, May 15
    • Anant Agarwal, "High Temperature Operation of SiC Power Devices," Workshop on Extreme Environments Technologies for Space Exploration, Jet Propulsion Laboratory, Pasedena, California, May 15, 2003.
    • (2003) Workshop on Extreme Environments Technologies for Space Exploration
    • Agarwal, A.1
  • 18
    • 0242496502 scopus 로고    scopus 로고
    • Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R. D. Vispute, T. Venkatesan and Anant Agarwal,1 kV 4H-SiC JBS Rectifiers Fabricated Using an A1N Capped Anneal, Materials Science Forum Vols. 433-436 (2003), pp. 843-846.
    • Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R. D. Vispute, T. Venkatesan and Anant Agarwal,"1 kV 4H-SiC JBS Rectifiers Fabricated Using an A1N Capped Anneal," Materials Science Forum Vols. 433-436 (2003), pp. 843-846.
  • 19
    • 0344467386 scopus 로고    scopus 로고
    • S. Ryu, A. Agarwal, J. Richmond, and J. Palmour, 4H-SiC DMOSFETs for High Frequency Power Switching Applications, Mat. Res. Soc. Symp. Proc. 764, 2003 Materials Research Society, pp. C.2.7.1-C.2.7.6.
    • S. Ryu, A. Agarwal, J. Richmond, and J. Palmour," 4H-SiC DMOSFETs for High Frequency Power Switching Applications," Mat. Res. Soc. Symp. Proc. Vol. 764, 2003 Materials Research Society, pp. C.2.7.1-C.2.7.6.
  • 20
    • 85017645392 scopus 로고    scopus 로고
    • Anant Agarwal, Adrian Powell, Joe Sumakeris, Sei-Hyung Ryu, Craig Capell, Lori Lipkin, Mrinal Das, Ranbir Singh, Calvin Carter and John Palmour, Recent Developments in SiC Materials and Power Devices at Cree - A Progress Report, presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 03, April 03, 2003, Tampa, Florida.
    • Anant Agarwal, Adrian Powell, Joe Sumakeris, Sei-Hyung Ryu, Craig Capell, Lori Lipkin, Mrinal Das, Ranbir Singh, Calvin Carter and John Palmour, "Recent Developments in SiC Materials and Power Devices at Cree - A Progress Report," presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 03, April 03, 2003, Tampa, Florida.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.