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1
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85017613569
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Private communication with Dr. Allen Hefner, NIST
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Private communication with Dr. Allen Hefner, NIST
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2
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85017649129
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10 A JBS: Brett A. Hull, Joseph J. Sumakeris, Michael J. O'Loughlin, Qingchun (Jon) Zhang, Jim Richmond, Adrian Powell, Eugene A. Imhoff, Karl D. Hobart, Angel Rivera and Allen Hefner, Performance and Stability of Large Area 4H-SiC 10 kV Junction Barrier Schottky Rectifiers, IEEE Trans. Electron Dev., In Press.
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10 A JBS: Brett A. Hull, Joseph J. Sumakeris, Michael J. O'Loughlin, Qingchun (Jon) Zhang, Jim Richmond, Adrian Powell, Eugene A. Imhoff, Karl D. Hobart, Angel Rivera and Allen Hefner, "Performance and Stability of Large Area 4H-SiC 10 kV Junction Barrier Schottky Rectifiers", IEEE Trans. Electron Dev., In Press.
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3
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85017623193
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2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers, Presented at the Int'l Conference on Silicon Carbide and Related Materials 2007.
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2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers", Presented at the Int'l Conference on Silicon Carbide and Related Materials 2007.
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4
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44949190901
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Progress in Silicon Carbide Power Devices
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th, State College, PA, USA
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th Device Research Conference, pp. 155-158, State College, PA, USA 2006.
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(2006)
Device Research Conference
, pp. 155-158
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Agarwal, A.1
Das, M.2
Hull, B.3
Krishnaswami, S.4
Palmour, J.5
Richmond, J.6
Ryu, S.-H.7
Zhang, J.8
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5
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85017620442
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2 High Speed 4H-SiC Power DMOSFETs
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San Francisco, CA
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2 High Speed 4H-SiC Power DMOSFETs". MRS 2006 Spring Meeting, Vol. 4, pp. 18-20, San Francisco, CA 2006.
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(2006)
MRS 2006 Spring Meeting
, vol.4
, pp. 18-20
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Ryu, S.-H.1
Jonas, C.2
Heath, B.3
Agarwal, A.4
Palmour, J.5
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6
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63149191799
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Reliability of High Voltage 4H-SiC MOSFET Devices
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San Francisco, CA
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Sumi Krishnaswami, Sei-Hyung Ryu, Bradley Heath, Anant Agarwal, John Palmour, Aivars Lelis, Charles Scozzie and James Scofield. "Reliability of High Voltage 4H-SiC MOSFET Devices". MRS 2006 Spring Meeting, Vol. 4, pp. 18-20, San Francisco, CA 2006
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(2006)
MRS 2006 Spring Meeting
, vol.4
, pp. 18-20
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Krishnaswami, S.1
Ryu, S.-H.2
Heath, B.3
Agarwal, A.4
Palmour, J.5
Lelis, A.6
Scozzie, C.7
Scofield, J.8
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7
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31844436391
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Design, Fabrication, and Characterization of Low Forward Drop, Low Leakage, 1-kV 4H-SiC JBS Rectifiers
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Lin Zhu, T. Paul Chow, Kenneth A. Jones, and Anant Agarwal, "Design, Fabrication, and Characterization of Low Forward Drop, Low Leakage, 1-kV 4H-SiC JBS Rectifiers," IEEE Trans. Electron Devices, Vol. 53, pp. 363-368,2006.
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(2006)
IEEE Trans. Electron Devices
, vol.53
, pp. 363-368
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Zhu, L.1
Paul Chow, T.2
Jones, K.A.3
Agarwal, A.4
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8
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84880073602
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2, 1.8 kV 4H-SiC DMOSFETs
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presented at the, September 18-23, Pittsburgh, Pennsylvania
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2, 1.8 kV 4H-SiC DMOSFETs," presented at the Int'l Conference on Silicon Carbide and Related Materials 2005, September 18-23, 2005 Pittsburgh, Pennsylvania.
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(2005)
Int'l Conference on Silicon Carbide and Related Materials
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Ryu, S.-H.1
Krishnaswami, S.2
Hull, B.3
Heath, B.4
Das, M.5
Richmond, J.6
Agarwal, A.7
Palmour, J.8
Scofield, J.9
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10
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27744470110
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2, 2 kV Power DMOSFETs in 4H-SiC
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Santa Barbara, Ca, May 23-26
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th International Symposium on Power Semiconductor Devices & IC's, pp. 275-278, Santa Barbara, Ca, May 23-26, 2005.
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(2005)
th International Symposium on Power Semiconductor Devices & IC's
, pp. 275-278
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Ryu, S.-H.1
Krishnaswami, S.2
Das, M.3
Hull, B.4
Richmond, J.5
Heath, B.6
Agarwal, A.7
Palmour, J.8
Scofield, J.9
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11
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28744441432
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Gate Oxide Reliability of 4H-SiC MOS Devices
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April 17-21
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rd Annual International Reliability Physics Symposium, pp. 592-593, April 17-21, 2005.
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(2005)
rd Annual International Reliability Physics Symposium
, pp. 592-593
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Krishnaswami, S.1
Das, M.2
Hull, B.3
Ryu, S.-H.4
Scofield, J.5
Agarwal, A.6
Palmour, J.7
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12
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26444508504
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4H-SiC DMOSFETs for High Speed Switching Applications
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Vols
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Sei-Hyung Ryu, Sumi Krishnaswami, Mrinal Das, James Richmond, Anant Agarwal, John Palmour and James Scofield,"4H-SiC DMOSFETs for High Speed Switching Applications," Materials Science Forum Vols. 483-485 (2005), pp. 797-800.
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(2005)
Materials Science Forum
, vol.483-485
, pp. 797-800
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Ryu, S.-H.1
Krishnaswami, S.2
Das, M.3
Richmond, J.4
Agarwal, A.5
Palmour, J.6
Scofield, J.7
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13
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17744384924
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An Overview of Cree's Silicon Carbide Power Devices
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presented at the Novi, Novi, Michigan, USA, October 21-22
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th Workshop on Power Electronics in Transportation (WPET 2004), Sheraton Detroit Novi, Novi, Michigan, USA, October 21-22, 2004, pp. 37-42.
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(2004)
th Workshop on Power Electronics in Transportation (WPET 2004), Sheraton Detroit
, pp. 37-42
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Richmond, J.1
Ryu, S.-H.2
Das, M.3
Krishnaswami, S.4
Hodge Jr., S.5
Agarwal, A.6
Palmour, J.7
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14
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8744258901
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Development of 10 kV 4H-SiC Power DMOSFETs
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Vols
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S.-H. Ryu, A. Agarwal, S. Krishnaswami, J. Richmond, and J. Palmour, "Development of 10 kV 4H-SiC Power DMOSFETs," Materials Science Forum Vols. 457-460 (2004), pp. 1385-1388.
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(2004)
Materials Science Forum
, vol.457-460
, pp. 1385-1388
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Ryu, S.-H.1
Agarwal, A.2
Krishnaswami, S.3
Richmond, J.4
Palmour, J.5
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15
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12844250168
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Anant Agarwal, Mrinal Das, Sumithra Krishnaswami, John Palmour, James Richmond, and Sei-Hyung Ryu, SiC Power Devices - An Overview, Mat. Res. Soc. Symp. Proc. 815, pp. 243-254, (2004) Materials research Society Symposium, San Francisco, California, U. S. A., April 14-15, 2004.
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Anant Agarwal, Mrinal Das, Sumithra Krishnaswami, John Palmour, James Richmond, and Sei-Hyung Ryu, "SiC Power Devices - An Overview," Mat. Res. Soc. Symp. Proc. Vol. 815, pp. 243-254, (2004) Materials research Society Symposium, San Francisco, California, U. S. A., April 14-15, 2004.
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16
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85017655200
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Anant Agarwal, Jim Richmond, Sei-Hyung Ryu, Mrinal Das, Sumi Krishnaswami and John Palmour, Latest Advances in SiC Device Technology and Practical Applications, presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 04, March 17, 2004, Monterey, California.
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Anant Agarwal, Jim Richmond, Sei-Hyung Ryu, Mrinal Das, Sumi Krishnaswami and John Palmour, "Latest Advances in SiC Device Technology and Practical Applications," presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 04, March 17, 2004, Monterey, California.
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17
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63149135281
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High Temperature Operation of SiC Power Devices
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Jet Propulsion Laboratory, Pasedena, California, May 15
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Anant Agarwal, "High Temperature Operation of SiC Power Devices," Workshop on Extreme Environments Technologies for Space Exploration, Jet Propulsion Laboratory, Pasedena, California, May 15, 2003.
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(2003)
Workshop on Extreme Environments Technologies for Space Exploration
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Agarwal, A.1
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18
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0242496502
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Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R. D. Vispute, T. Venkatesan and Anant Agarwal,1 kV 4H-SiC JBS Rectifiers Fabricated Using an A1N Capped Anneal, Materials Science Forum Vols. 433-436 (2003), pp. 843-846.
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Lin Zhu, Mayura Shanbhag, T. Paul Chow, Kenneth A. Jones, Matthew H. Ervin, Pankaj B. Shah, Michael A. Derenge, R. D. Vispute, T. Venkatesan and Anant Agarwal,"1 kV 4H-SiC JBS Rectifiers Fabricated Using an A1N Capped Anneal," Materials Science Forum Vols. 433-436 (2003), pp. 843-846.
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19
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0344467386
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S. Ryu, A. Agarwal, J. Richmond, and J. Palmour, 4H-SiC DMOSFETs for High Frequency Power Switching Applications, Mat. Res. Soc. Symp. Proc. 764, 2003 Materials Research Society, pp. C.2.7.1-C.2.7.6.
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S. Ryu, A. Agarwal, J. Richmond, and J. Palmour," 4H-SiC DMOSFETs for High Frequency Power Switching Applications," Mat. Res. Soc. Symp. Proc. Vol. 764, 2003 Materials Research Society, pp. C.2.7.1-C.2.7.6.
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20
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85017645392
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Anant Agarwal, Adrian Powell, Joe Sumakeris, Sei-Hyung Ryu, Craig Capell, Lori Lipkin, Mrinal Das, Ranbir Singh, Calvin Carter and John Palmour, Recent Developments in SiC Materials and Power Devices at Cree - A Progress Report, presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 03, April 03, 2003, Tampa, Florida.
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Anant Agarwal, Adrian Powell, Joe Sumakeris, Sei-Hyung Ryu, Craig Capell, Lori Lipkin, Mrinal Das, Ranbir Singh, Calvin Carter and John Palmour, "Recent Developments in SiC Materials and Power Devices at Cree - A Progress Report," presented at Government Microcircuit Applications and Critical Technology Conference, GOMACTech 03, April 03, 2003, Tampa, Florida.
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