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Volumn 527-529, Issue PART 2, 2006, Pages 1051-1054

Process optimisation for 〈11-20〉 4H-SiC MOSFET applications

Author keywords

(11 20) face; High mobility; MOSFETs; Oxidation; Process; TEOS

Indexed keywords

CARRIER MOBILITY; EPITAXIAL LAYERS; OPTIMIZATION; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

FIELD EFFECT MOBILITY; GATE OXIDE FORMATION; HIGH MOBILITY;

MOSFET DEVICES;

EID: 36048959854 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.1051 Document Type: Conference Paper

Times cited : (8)

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