Nanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures

Nanotechnology

Volumn 25, Issue 2, 2014, Pages

  Greco, Giuseppe ^a   Fiorenza, Patrick ^a   Giannazzo, Filippo ^a   Alberti, Alessandra ^a   Roccaforte, Fabrizio ^a  

^a CNR   (Italy)

Author keywords

2DEG; AlGaN GaN HEMT; C AFM; oxidation

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURES; C-AFM; ELECTRICAL CHARACTERIZATION; SCANNING PROBE MICROSCOPY TECHNIQUES; SHEET CARRIER DENSITIES; STRUCTURAL CHARACTERIZATION; STRUCTURAL MODIFICATIONS;

ELECTRIC PROPERTIES; ELECTRON GAS; NANOTECHNOLOGY; OXIDATION; OXIDATION RESISTANCE; SCANNING PROBE MICROSCOPY; TWO DIMENSIONAL ELECTRON GAS;

GALLIUM NITRIDE;

EID: 84890685500     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/2/025201     Document Type: Article

References (36)

1. Ren F and Zolper J C (ed) 2003 Wide Band Gap Electronc Devices (Singapore: World Scientific)
2. Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng M H and Raineri V 2010 Appl. Surf. Sci. 256 5727
3. Ambacher O et al 1999 J. Appl. Phys. 85 3222
4. Medjdoub F, Zegaoui M, Grimbert B, Ducatteau D, Rolland N and Rolland P A 2012 IEEE Electron Device Lett. 33 1168
5. Kikkawa T, Makiyama K, Ohku T, Kanamura M, Imanishi K, Hara N and Joshin K 2009 Phys. Status Solidi a 206 1135
6. Matocha K, Chow T P and Gutmann R J 2005 IEEE Trans. Electron Devices 52 6 (Pubitemid 40118904)
7. Liu Z H, Ng G I, Arulkumaran S, Maung Y K T, Teo K L, Foo S C and Sahmuganathan V 2009 Appl. Phys. Lett. 95 223501
8. Roccaforte F, Greco G, Fiorenza P, Raineri V, Malandrino G and Lo Nigro R 2012 Appl. Phys. Lett. 100 063511
9. Fiorenza P, Greco G, Fisichella G, Roccaforte F, Malandrino G and Lo Nigro R 2013 Appl. Phys. Lett. 103 112905
10. Masato H, Ikeda Y, Matsuno T, Inoue K and Nishii K 2000 Proc. IEDM (San Francisco, CA, December) p 377
11. Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C and Raineri V 2008 Appl. Phys. Lett. 92 252101
12. Roccaforte F, Giannazzo F, Iucolano F, Bongiorno C and Raineri V 2009 J. Appl. Phys. 106 023703
13. Choi Y-H, Lim J, Kim Y-S, Seok O, Kim M-K and Han M-K 2010 Proc. 22nd Int. Symp. on Power Semiconductor Devices & ICs (Hiroshima, June) p 233
14. Taking S, MacFarlane D and Wasige E 2011 IEEE Trans. Electron Devices 58 1418
15. Seok O, Kim Y-S, Lim J and Han M-K 2011 Proc. 23rd Int. Symp. on Power Semiconductor Devices & IC's (San Diego, CA, May) p 235
16. Lee C-S, Chou B-Y, Yang S-H, Hsu W-C, Wu C-L, Yang W L, Liu D-G and Lin M-Y 2011 IEEE Trans. Electron Devices 58 2981
17. Liu H-Y, Chou B-Y, Hsu W-C, Lee C-S, Sheu J-K and Ho C-S 2013 IEEE Trans. Electron Devices 60 213
18. Sudhir G S, Peyrot Y, Kriiger J, Kim Y, Klockenbrink R, Kisielowski C, Rubin M D and Weber E R 1998 Mater. Res. Soc. Symp. Proc. 482 525
19. Van de Walle C G 2003 Phys. Rev. B 68 165209
20. Wu X H, Elsass C R, Abare A, Mack M, Keller S, Petroff P M, DenBaars S P, Speck J S and Rosner S J 1998 Appl. Phys. Lett. 72 692 (Pubitemid 128672383)
21. Pécz B, Makkai Zs, di Forte-Poisson M A, Huet F and Dunin-Borkowski R E 2001 Appl. Phys. Lett. 78 1529
22. Bougrioua Z, Moerman I, Nistor L, Van Daele B, Monroy E, Palacios T, Calle F and Leroux M 2003 Phys. Status Solidi a 195 93
23. Sasaki H, Kato S, Matsuda T, Sato Y, Iwami M and Yoshida S 2006 Japan. J. Appl. Phys. 45 2532
24. Roensch S, Sizov V, Yagi T, Murad S, Groh L, Lutgen S, Krieger M and Weber H B 2013 Mater. Sci. Forum 740-742 502
25. Iucolano F, Roccaforte F, Giannazzo F and Raineri V 2008 J. Appl. Phys. 104 093706
26. Roccaforte F, Iucolano F, Giannazzo F, Alberti A and Raineri V 2006 Appl. Phys. Lett. 89 022103 (Pubitemid 44079061)
27. Fontserè A et al 2012 Nanotechnology 23 395204
28. Jeon C M and Lee C L 2003 Appl. Phys. Lett. 82 4301
29. Greco G, Giannazzo F, Iucolano F, Lo Nigro R and Roccaforte F 2013 J. Appl. Phys. 114 083717 and references therein
30. Higashiwaki M, Chowdhury S, Swenson B L and Mishra U K 2010 Appl. Phys. Lett. 97 222104
31. Jang H W, Lee M-K, Shin H-J and Lee J-L 2003 Phys. Status Solidi c 0 2456
32. Chiu H-C, Yang C-W, Chen C-H, Fu J S and Chien F-T 2011 Appl. Phys. Lett. 99 153508
33. Egerten R F 1996 Electron Energy-Loss Spectroscopy in the Electron Microscope 2nd edn (New York: Springer)
34. Van de Walle C G 2003 Phys. Rev. B 68 165209
35. Pearton S J, Cho H, LaRoche J R, Ren F, Wilson R G and Lee J W 1999 J. Appl. Phys. 75 2939
36. Hayes J M, Kuball M, Bell A, Harrison I, Korakakis D and Foxon C T 1999 Appl. Phys. Lett. 75 2097