Oxygen diffusion into SiO2-capped GaN during annealing

Applied Physics Letters

Volumn 75, Issue 19, 1999, Pages 2939-2941

  Pearton, S J ^a   Cho, H ^a   LaRoche, J R ^b   Ren, F ^b   Wilson, R G ^d   Lee, J W ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

^c Qualtx Technology Inc   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000681704     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125194     Document Type: Article

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