Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

Nanotechnology

Volumn 23, Issue 39, 2012, Pages

  Fontsere A ^a   Perez Tomas A ^a   Placidi, M ^a   Llobet, J ^a   Baron, N ^b,c   Chenot, S ^b   Cordier, Y ^b   Moreno, J C ^b   Jennings, M R ^d   Gammon, P M ^d   Fisher, C A ^d   Iglesias, V ^e   Porti, M ^e   Bayerl, A ^e   Lanza, M ^e   Nafria M ^e  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CRHEA CNRS   (France)

^c Pl Marcel Rebuffat ^*  (France)

^d UNIVERSITY OF WARWICK   (United Kingdom)

^e ETSE   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ATOMIC SCALE; CONDUCTIVE AFM; CONTACT AREAS; DONOR STATE; ELECTRICAL CHARACTERIZATION; INHOMOGENEITIES; NANO SCALE; REVERSE CURRENTS; REVERSE LEAKAGE; SCHOTTKY; SCHOTTKY CONTACTS;

ELECTRON GAS; GALLIUM NITRIDE; NANOTECHNOLOGY; SURFACE PROPERTIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84866342520     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/39/395204     Document Type: Article

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