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Applied Physics Letters

Volumn 99, Issue 15, 2011, Pages

Characterization of enhancement-mode AlGaN/GaN high electron mobility transistor using N2O plasma oxidation technology

(5) Chiu, Hsien Chin a Yang, Chih Wei a Chen, Chao Hung a Fu, Jeffrey S a Chien, Feng Tso b

a CHANG GUNG UNIVERSITY (Taiwan)

b FENG CHIA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; ENHANCEMENT-MODE; GAN HEMTS; GATE LEAKAGES; GATE METAL DEPOSITION; GATE METALS; GATE TERMINALS; HIGH QUALITY; NATIVE OXIDES; PLASMA OXIDATION; POLARIZATION CHARGES;

ELECTRON MOBILITY; GALLIUM NITRIDE; OXIDATION; PLASMA DEPOSITION; PLASMAS; TUNGSTEN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80054971354 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3651331 Document Type: Article

Times cited : (25)

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