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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures

(4) Higashiwaki, Masataka a,b,c Chowdhury, Srabanti a Swenson, Brian L a Mishra, Umesh K a

a University of California (United States)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c Japan Science and Technology Agency (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HETEROSTRUCTURES; ANNEALED SAMPLES; ANNEALING ATMOSPHERES; ANNEALING CONDITION; ANNEALING TEMPERATURES; AS-GROWN; BARRIER HEIGHTS; CHEMICAL BONDING STATE; CORE LEVELS; DONOR STATE; FERMI LEVEL PINNING; GAS ATMOSPHERE; HIGH TEMPERATURE; HIGH-DENSITY; OXIDATION BEHAVIORS; OXIDATION LEVEL; OXIDE STRUCTURES; SURFACE BARRIER; SURFACE CHEMICAL STATE; XPS SPECTRA;

ALUMINUM; ATOMIC SPECTROSCOPY; CHEMICAL BONDS; CRYSTALS; FERMI LEVEL; GALLIUM NITRIDE; OXIDATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC TEMPERATURE;

EID: 78650655943 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3522649 Document Type: Article

Times cited : (68)

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