Modelling the inhomogeneous SiC Schottky interface

Journal of Applied Physics

Volumn 114, Issue 22, 2013, Pages

  Gammon, P M ^a   Perez Tomas A ^b   Shah, V A ^a   Vavasour, O ^a   Donchev, E ^c   Pang, J S ^c   Myronov, M ^a   Fisher, C A ^a   Jennings, M R ^a   Leadley, D R ^a   Mawby, P A ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT INHOMOGENEITY; CRYOGENIC TEMPERATURES; FITTING PARAMETERS; INTERFACE INHOMOGENEITY; PARALLEL CONDUCTION; PHYSICAL INTERPRETATION; RESISTIVE EFFECTS; THERMIONIC FIELD EMISSION;

SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

THERMOELECTRICITY;

EID: 84890471821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4842096     Document Type: Article

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