Phase composition and electrical characteristics of nickel silicide Schottky contacts formed on 4H-SiC

Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

  Nikitina, I ^a   Vassilevski, K ^a   Horsfall, A ^a   Wright, N ^a   O'Neill, A G ^a   Ray, S K ^b   Zekentes, K ^c   Johnson, C M ^d  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^d UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION LAYER; BARRIER HEIGHTS; ELECTRICAL CHARACTERISTIC; INTERMEDIATE TEMPERATURES; MICRO-RAMAN MAPPING; NICKEL MONOSILICIDE; NICKEL SILICIDE; NISI FILMS; SCHOTTKY CONTACTS; SIC SCHOTTKY DIODE; TEMPERATURE RANGE;

ANNEALING; CHEMICAL REACTIONS; LIGHT EMITTING DIODES; NICKEL; NICKEL ALLOYS; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON CARBIDE; TITANIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68849086075     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/5/055006     Document Type: Article

References (45)

1. Cree Inc Zero recovery rectifiers http://www.cree.com/ftp/pub/CSDALL.pdf
2. Infineon Technologies AG Silicon Carbide Ultrafast Schottky Diode Chips http://www.infineon.com
3. Singh R, Cooper J, Melloch M, Chow T and Palmour J 2002 IEEE Trans. Electron Devices 49 665-72
4. Zhao J H, Alexandrov P and Li X 2003 IEEE Electron Device Lett. 24 402-4
5. Roccaforte F, La Via F, Raineri V, Musumeci P, Calcagno L and Condorelly G G 2003 Appl. Phys. A 77 827-33
6. Ma X, Sadagopan P and Sudarshan T S 2006 Phys. Stat. Sol. A 203 643-50
7. Duman S, Doan S, Gürbulak B and Türüt A 2008 Appl. Phys. A 91 337-40
8. Ewing D J, Porter L M, Wahab Q, Ma X, Sudharshan T S, Tumakha S, Gao M and Brillson J L 2007 J. Appl. Phys. 101 114514
9. Defives D, Noblanc O, Dua C, Brylinski C, Barthula M and Meyer F 1999 Mater. Sci. Eng. B61-62 395-401
10. Roccaforte F, La Via F, Baeri A, Raineri V, Calcagno L and Mangano F 2004 J. Appl. Phys. 96 4313-8
11. Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill A G, Hilton K P, Munday A G, Hydes A J, Uren M J and Johnson C M 2007 Mater. Sci. Forum 556-7 873-6
12. T Nakamura, T Miyanagi, I Kamata, T Jikimoto and H Tsuchida 2005 IEEE Electron Device Lett. 26 99-101
13. Weiss R, Frey L and Ryssel H 2001 Appl. Surf. Sci. 184 413-8
14. Shalish I and Shapira Yoram 2000 IEEE Electron Device Lett. 21 581-3
15. Shalish I, de Oliveira C E M, Shapira Yoram, Burstein L and Eizenberg M 2000 J. Appl. Phys. 88 5724-8
16. Sochacki Mariusz, Kolendo Adam, Szmidt Jan and Werbowy Aleksander 2005 Solid-State Electron. 49 585-90
17. Ferhat Hamida A, Ouennoughi Z, Sellai A, Weiss R and Ryssel H 2008 Semicond. Sci. Technol 23 045005
18. Bhatnagar M, Baliga B J, Kirk H R and Rozgonyi G A 1996 IEEE Trans. Electron Devices 43 150-6
19. La Via F, Roccaforte F, Makhtari A, Raineri V, Musumeci P and Calcagno L 2002 Microelectron. Eng. 60 269-82
20. Roccaforte F, La Via F, Raineri V, Pierobon R and Zanoni E 2003 J. Appl. Phys. 93 9137-44
21. La Via F, Roccaforte F, Raineri V, Mauceri M, Ruggiero A, Musumeci P, Calcagno L, Castaldini A and Cavallini A 2003 Microelectron. Eng. 70 519-23
22. Vassilevski K V, Nikitina I P, Wright N G, Horsfall A B, O'Neill A G and Johnson C M 2006 Micro electron. Eng. 83 150-4
23. Pérez R, Mestres N, Montserrat J, Tournier D and Godignon P 2005 Phys. Stat. Sol. A 202 692-7
24. Nikitina I P, Vassilevski K V, Wright N G, Horsfall A B, O'Neill A G and Johnson C M 2005 J. Appl. Phys. 97 083709
25. Porter L M, Davis R F, Bow J S, Kim M J, Carpenter R W and Glass R C 1995 J. Mater. Res. 10 668-79
26. Marinova T S, Krastev V, Hallin C, Yakimova R and Janzen E 1996 Appl. Surf. Sci. 99 119-25
27. Calcagno L, Ruggiero A, Roccaforte F and La Via F 2005 J. Appl. Phys. 98 023713
28. Tung R T 1992 Phys. Rev. B 45 13509-23
29. Cree Inc Silicon Carbide Substrates, Product Specification http://www.cree.com
30. Zeigler J F, Biersack J P and Littmark U 1985 in The stopping and range of ions in solids (Oxford: Pergamon) vol. 1 http://www.srim.org
31. Vassilevski K V, Horsfall A B, Johnson C M and Wright N G 2004 Mater. Sci. Forum 457-60 989-92
32. Kyuregyan A S 2000 Semiconductors 34 835-43
33. Information on http://www.tectra.de/heater.htm
34. Schroder D K 1998 Semiconductor Material and Device Characterisation 2nd edn (New York: Wiley-Interscience) 206
35. Norde H A 1979 J. Appl. Phys. 50 5052-3
36. Levinshtein M E, Rumyantsev S L and Shur M S 2001 in Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (New York: Wiley)
37. Crowell C R 1965 Solid-State Electron. 8 395-9
38. Itoh A and Matsunami H 1997 Phys. Stat. Sol. A 162 389-408
39. Vassilevski K V, Horsfall A B, Johnson C M, Wright N G and O'Neill A G 2002 Mater. Sci. Forum 389-393 1145-8
40. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) 299
41. Levit M, Grimberg I and Weiss B-Z 1996 J. Appl. Phys. 80 167-73
42. Chen L J 2004 Silicide Technology For Integrated Circuits (London: Institution of Electrical Engineers) p 279
43. Fenske F, Schopke A, Selle B, Lange H and Wolke W 1994 Mat. Res. Soc. Symp. Proc. 320 427-32
44. Falke U, Fenske F, Schulze S and Hietschold M 1997 Phys. Stat. Sol. A 162 615-21
45. Hietschold M, Schulze S, Falke U, Fenske F and Wolke W 1996 Appl. Surf. Sci. 102 156-8