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Physica B: Condensed Matter

Volumn 414, Issue , 2013, Pages 35-41

Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model

(3) Korucu, Demet a Turut, Abdulmecit b Efeoglu, Hasan c

a HAKKARI UNIVERSITY (Turkey)

b ISTANBUL MEDENIYET UNIVERSITY (Turkey)

c ATATÜRK UNIVERSITY (Turkey)

Author keywords

Barrier inhomogeneity; GaAs semiconductor; Metal semiconductor metal contacts; Richardson constant; Schottky barrier height; Schottky diodes

Indexed keywords

BARRIER INHOMOGENEITIES; GAAS SEMICONDUCTORS; METAL-SEMICONDUCTOR-METAL CONTACTS; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES;

GOLD ALLOYS; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

GALLIUM ARSENIDE;

EID: 84875130331 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2013.01.010 Document Type: Article

Times cited : (53)

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