Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3701-3707

  Zheng, L ^a   Joshi, R P ^a   Fazi, Christian ^b  

^a Old Dominion University   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

BARRIER HEIGHTS; REVERSE CURRENT DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0032615496     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369735     Document Type: Article

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