An investigation on barrier inhomogeneities of 4H-SiC Schottky barrier diodes induced by surface morphology and traps

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 694-699

  Lee, Kung Yen ^a   Huang, Yan Hao ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

4H Silicon carbide (SiC); Barrier inhomogeneities; carrots; chemical mechanical polishing (CMP); resistive termination extension (RTE); Schottky barrier diode (SBD); Schottky barrier height (SBH); surface morphology; trap

Indexed keywords

4H SILICON CARBIDE; BARRIER INHOMOGENEITIES; CARROTS; CHEMICAL-MECHANICAL POLISHING (CMP); RESISTIVE TERMINATION EXTENSION (RTE); SCHOTTKY BARRIER DIODE (SBD); SCHOTTKY BARRIER HEIGHTS; TRAP;

CHEMICAL MECHANICAL POLISHING; POLISHING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SURFACE MORPHOLOGY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84862820836     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2181391     Document Type: Article

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