Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide

Solid-State Electronics

Volumn 51, Issue 3, 2007, Pages 466-474

  Furno, M ^a   Bonani, F ^a   Ghione, G ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

4H SiC; Parallel conduction model; Schottky barrier diode; Transfer matrix method; Tunnelling

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; TRANSFER MATRIX METHOD;

PARALLEL CONDUCTION; STATIC CURRENT; TRANSMISSION COEFFICIENT;

SCHOTTKY BARRIER DIODES;

EID: 33947670934     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.01.028     Document Type: Article

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