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Applied Physics Letters

Volumn 102, Issue 24, 2013, Pages

Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode

(5) Shin, Jong Hoon a Park, Jinhong a Jang, Seungyup a Jang, T a Sang Kim, Kyu b

a LG Electronics Inc (South Korea)

b Sangji University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN SCHOTTKY DIODES; BARRIER HEIGHT INHOMOGENEITY; DONOR STATE; ELECTROREFLECTANCE SPECTROSCOPIES; INHOMOGENEOUS SCHOTTKY BARRIER HEIGHT; SCHOTTKY GATE; STRONG CORRELATION;

GALLIUM NITRIDE; PHOTOELECTRONS; SCHOTTKY BARRIER DIODES; X RAY PHOTOELECTRON SPECTROSCOPY;

METALS;

EID: 84879830716 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4811756 Document Type: Article

Times cited : (64)

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