Characterization and modeling of n-n SiSiC heterojunction diodes

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Perez Tomas A ^a   Jennings, M R ^a   Davis, M ^a   Covington, J A ^a   Mawby, P A ^a   Shah, V ^a   Grasby, T ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; GROWTH (MATERIALS); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

ENERGY BAND OFFSETS; TEMPERATURE DEPOSITION; THERMOIONIC EMISSION MODELS;

SEMICONDUCTOR DIODES;

EID: 34547219425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2752148     Document Type: Article

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