Measurement and modelling of power electronic devices at cryogenic temperatures

IEE Proceedings: Circuits, Devices and Systems

Volumn 153, Issue 5, 2006, Pages 407-415

  Forsyth, A J ^a   Yang, S Y ^a   Mawby, P A ^b   Igic, P ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; INSULATED GATE BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; PARAMETER ESTIMATION; PULSE WIDTH MODULATION;

CRYOGENIC TEMPERATURES; PARAMETER VARIATIONS; SINUSOIDAL PULSE-WIDTH-MODULATED;

POWER ELECTRONICS;

EID: 33750456489     PISSN: 13502409     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-cds:20050359     Document Type: Article

References (10)

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