A study of temperature-related non-linearity at the metal-silicon interface

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Gammon, P M ^a,b   Donchev, E ^b   Perez Tomas A ^c   Shah, V A ^a   Pang, J S ^b   Petrov, P K ^b   Jennings, M R ^a   Fisher, C A ^a   Mawby, P A ^a   Leadley, D R ^a   McN Alford, N ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION RATES; BARRIER HEIGHTS; CURRENT PATHS; ELECTRON TRANSPORT; FITTING PARAMETERS; INHOMOGENEITIES; LOW TEMPERATURES; METAL SEMICONDUCTOR INTERFACE; METAL-SILICON INTERFACES; SADDLE POINT; SCHOTTKY DIODES; SEMI-AUTOMATED; TEMPERATURE DEPENDENCIES;

DIODES; SCHOTTKY BARRIER DIODES; SILICON;

SEMICONDUCTOR DIODES;

EID: 84871222225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768718     Document Type: Article

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