Electrical characterization of inhomogeneous Ti/4H-SiC Schottky contacts

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 395-401

  Defives, D ^a,b   Noblanc, O ^a   Dua, C ^a   Brylinski, C ^a   Barthula, M ^b   Meyer, F ^b  

^a THALES   (France)

^b CNRS   (France)

Author keywords

Barrier inhomogeneities; Schottky rectifiers; Silicon carbide

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; TITANIUM; VOLTAGE MEASUREMENT;

SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 0032659440     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00541-8     Document Type: Article

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