On the electrical behavior of V2O5/4H-SiC Schottky diodes

Journal of Applied Physics

Volumn 113, Issue 22, 2013, Pages

  Bellone, S ^a   Di Benedetto, L ^a   Rubino, A ^a  

^a UNIVERSITY OF SALERNO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL BEHAVIORS; ELECTRICAL PARAMETER; IDEALITY FACTORS; INHOMOGENEITIES; RECTIFYING BEHAVIORS; SCHOTTKY BARRIER HEIGHTS; SERIES RESISTANCES; TEMPERATURE BEHAVIOR;

ELECTRIC RESISTANCE; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

SILICON CARBIDE;

EID: 84879228394     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4809543     Document Type: Article

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