Investigation of barrier inhomogeneities in Mo/4H-SiC Schottky diodes

Microelectronic Engineering

Volumn 88, Issue 6, 2011, Pages 969-975

  Boussouar, L ^a   Ouennoughi, Z ^a   Rouag, N ^a   Sellai, A ^b   Weiss, R ^c   Ryssel, H ^c  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b SULTAN QABOOS UNIVERSITY   (Oman)

^c FIIS   (Germany)

Author keywords

4H SiC; Barrier inhomogeneities; Current voltage characteristics; Schottky diodes

Indexed keywords

4H-SIC; BARRIER HEIGHTS; BARRIER INHOMOGENEITIES; CURRENT-VOLTAGE MEASUREMENTS; EDGE TERMINATION; ELECTRICAL BEHAVIORS; GENERAL MODEL; GUARD-RINGS; HIGH RESISTIVITY; IDEALITY FACTORS; INHOMOGENEITIES; INHOMOGENEOUS SCHOTTKY BARRIER HEIGHT; IV CHARACTERISTICS; PINCHOFF; REVERSE CHARACTERISTICS; REVERSE ELECTRICAL CHARACTERISTICS; REVERSE-BIAS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SCHOTTKY-BARRIER HEIGHTS; SERIES RESISTANCES; SIC SCHOTTKY DIODE; THERMIONIC EMISSION THEORY;

BIAS VOLTAGE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; MOLYBDENUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 79952448444     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.12.070     Document Type: Article

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