Charge transport mechanisms and memory effects in amorphous TaNx thin films

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-9

  Spyropoulos Antonakakis, Nikolaos ^a   Sarantopoulou, Evangelia ^a   Drazic, Goran ^b   Kollia, Zoe ^a   Christofilos, Dimitrios ^c   Kourouklis, Gerasimos ^c   Palles, Dimitrios ^a   Cefalas, Alkiviadis Constantinos ^a  

^a THEORETICAL AND PHYSICAL CHEMISTRY INSTITUTE   (Greece)

^b NATIONAL INSTITUTE OF CHEMISTRY   (Slovenia)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Amorphous semiconductors; Conductive AFM; Memory effects; Nanoelectronics; Nitrides; Thin films

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ATOMIC FORCE MICROSCOPY; BIAS VOLTAGE; CARRIER TRANSPORT; CONDUCTIVE FILMS; GOLD; GOLD DEPOSITS; HYSTERESIS; LEAKAGE CURRENTS; NANOELECTRONICS; NITRIDES; PULSED LASER DEPOSITION; SILICON; SUBSTRATES; TANTALUM COMPOUNDS; THRESHOLD VOLTAGE;

AMORPHOUS NANOSTRUCTURES; CHARGE TRANSPORT MECHANISMS; CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL CHARACTERISTIC; MEMORY EFFECTS; POSITIVE BIAS VOLTAGES; SEMICONDUCTING MATERIALS;

THIN FILMS;

EID: 84887312833     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-432     Document Type: Article

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