Ultrafast resistive-switching phenomena observed in NiN-based ReRAM cells

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2302-2307

  Kim, Hee Dong ^a   An, Ho Myoung ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

Author keywords

NiN; resistive switching; space charge limited conduction (SCLC)

Indexed keywords

CONDUCTING FILAMENT; CONDUCTION MECHANISM; HIGH-RESISTANCE STATE; HIGH-SPEED MEMORY; HIGH-TO-LOW; METAL INSULATORS; NIN; OHMIC BEHAVIOR; PULSED MODE; RELIABILITY TEST; RESISTANCE RATIO; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION TIME; SPACE CHARGE LIMITED CONDUCTION; SWITCHING BEHAVIORS; ULTRA-FAST;

CONDUCTIVE FILMS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; REDOX REACTIONS; SWITCHING;

NICKEL COMPOUNDS;

EID: 84865477731     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2202237     Document Type: Article

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