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Applied Physics Letters

Volumn 96, Issue 15, 2010, Pages

Thermal stability comparison of TaN on HfO2 and Al2 O3

(2) Kwon, Jinhee a Chabal, Yves J a

a The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LAYER; GATE STACKS; IN-SITU; PARTIAL REDUCTION; TANTALUM-NITRIDE FILM; THERMAL PROCESSING; THERMAL STABILITY;

ALUMINUM; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM COMPOUNDS; IN SITU PROCESSING; NITRIDES; SILICATES; TANNING; TANTALUM COMPOUNDS; THERMOGRAVIMETRIC ANALYSIS;

TANTALUM;

EID: 77951546549 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3396189 Document Type: Article

Times cited : (8)

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