Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °c

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Tiggelaar, R M ^a,b   Groenland, A W ^a,b   Sanders, R G P ^a,b   Gardeniers, J G E ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL PROPERTIES; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; ELECTRODEPOSITION; HEAT CONDUCTION; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; THIN FILMS; VAPORS;

BARRIER HEIGHTS; CHEMICAL VAPOR DEPOSITED; DESIGN GRAPHS; DIELECTRIC BREAKDOWNS; E FIELDS; ELECTRICAL BREAKDOWNS; ELECTRICAL CONDUCTIONS; ELECTRICAL FIELDS; ELECTRICAL PROPERTIES; FRENKEL-POOLE CONDUCTIONS; HIGH TEMPERATURES; HIGHER TEMPERATURES; LOW PRESSURES; LOW STRESS; SILICON NITRIDE FILMS; SILICON NITRIDE THIN FILMS;

ELECTRIC NETWORK ANALYSIS;

EID: 60449115338     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3078027     Document Type: Article

References (33)

1. P. van Male, M. H. J. M. de Croon, R. M. Tiggelaar, A. van den Berg, and J. C. Schouten, Int. J. Heat Mass Transfer 47, 87 (2004). 0017-9310
2. R. M. Tiggelaar, P. W. H. Loeters, P. van Male, R. E. Oosterbroek, J. G. E. Gardeniers, M. H. J. M. de Croon, J. C. Schouten, and A. van den Berg, Sens. Actuators, A 0924-4247 10.1016/j.sna.2004.01.036 112, 267 (2004).
3. R. M. Tiggelaar, P. van Male, J. W. Berenschot, J. G. E. Gardeniers, R. E. Oosterbroek, M. H. J. M. de Croon, J. C. Schouten, A. van den Berg, and M. C. Elwenspoek, Sens. Actuators, A 0924-4247 10.1016/j.sna.2004.09.004 119, 196 (2005).
4. S. J. Bijlsma, H. van Kranenburg, K. J. B. M. Nieuwesteeg, M. G. Pitt, and J. F. Verweij, IEEE Trans. Electron Devices 0018-9383 10.1109/16.535353 43, 1592 (1996).
5. S. Habermehl and C. Carmignani, Appl. Phys. Lett. 0003-6951 10.1063/1.1433167 80, 261 (2002).
6. P. L. Mills, D. J. Quiram, and J. F. Ryley, Chem. Eng. Sci. 62, 6992 (2007). 0009-2509
7. D. Briand, A. Krauss, B. van der Schoot, U. Weimar, N. Barsan, W. Göpel, and N. F. de Rooij, Sens. Actuators B 0925-4005 10.1016/S0925- 4005(00)00433-0 68, 223 (2000).
8. R. W. Johnson, J. L. Evans, P. Jacobsen, J. R. R. Thompson, and M. Christopher, IEEE Trans. Electron. Packag. Manuf. 1521-334X 10.1109/TEPM.2004. 843109 27, 164 (2004).
9. C. T. Kirk, Jr., J. Appl. Phys. 0021-8979 10.1063/1.326447 50, 4190 (1979).
10. J. Robertson and M. J. Powell, Appl. Phys. Lett. 0003-6951 10.1063/1.94794 44, 415 (1984).
11. D. T. Krick, P. M. Lenahan, and J. Kanicki, J. Appl. Phys. 0021-8979 10.1063/1.341499 64, 3558 (1988).
12. P. M. Lenahan, D. T. Krick, and J. Kanicki, Appl. Surf. Sci. 0169-4332 10.1016/0169-4332(89)90456-X 39, 392 (1989).
13. D. A. Buchanan, R. A. Abram, and M. J. Morant, Solid-State Electron. 0038-1101 10.1016/0038-1101(87)90055-4 30, 1295 (1987).
14. V. I. Belyi, L. L. Vasilyeva, A. S. Ginovker, V. A. Gritsenko, S. M. Repinsky, S. P. Sinitsa, T. P. Smirnova, and F. L. Edelman, Materials Science Monographs 34 (Elsevier, Amsterdam, The Netherlands, 1987).
15. S. Bouwstra, " Resonating microbridge mass flow sensor.," Ph.D. thesis, University of Twente, 1990.
16. R. S. Bailey and V. J. Kapoor, J. Vac. Sci. Technol. 0022-5355 10.1116/1.571341 20, 484 (1982).
17. V. J. Kapoor, R. S. Bailey, and S. R. Smith, J. Vac. Sci. Technol. 0022-5355 10.1116/1.570747 18, 305 (1981).
18. V. J. Kapoor and R. S. Bailey, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.571966 1, 600 (1983).
19. J. G. E. Gardeniers, H. A. C. Tilmans, and C. C. G. Visser, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.580239 14, 2879 (1996).
20. I. Jonak-Auer, R. Meisels, and F. Kuchar, Infrared Phys. Technol. 1350-4495 10.1016/S1350-4495(97)00011-X 38, 223 (1997).
21. B. Stannowski, J. K. Rath, and R. E. I. Schropp, Thin Solid Films 0040-6090 10.1016/S0040-6090(01)01291-3 395, 339 (2001).
22. W. M. Arnoldbik, C. J. M. Maŕe, A. J. H. Maas, M. J. van den Boogaard, F. J. P. M. Habraken, and A. E. T. Kuiper, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48.5444 48, 5444 (1993).
23. S. M. Sze, J. Appl. Phys. 0021-8979 10.1063/1.1710030 38, 2951 (1967).
24. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, Hoboken, NJ, 2007).
25. D. Frohman-Bentchkowsky and M. Lenzlinger, J. Appl. Phys. 0021-8979 10.1063/1.1658181 40, 3307 (1969).
26. S. Manzini, J. Appl. Phys. 0021-8979 10.1063/1.339334 62, 3278 (1987).
27. B. H. Yun, Appl. Phys. Lett. 0003-6951 10.1063/1.88414 27, 256 (1975).
28. Z. A. Weinberg and R. A. Pollak, Appl. Phys. Lett. 0003-6951 10.1063/1.88413 27, 254 (1975).
29. Z. A. Weinberg, Appl. Phys. Lett. 0003-6951 10.1063/1.89164 29, 617 (1976).
30. K. Kobayashi, H. Miyatake, M. Hirayama, T. Higaki, and H. Abe, J. Electrochem. Soc. 0013-4651 10.1149/1.2069479 139, 1693 (1992).
31. H. Bachhofer, H. Reisinger, E. Bertagnolli, and H. von Philipsborn, J. Appl. Phys. 0021-8979 10.1063/1.1343892 89, 2791 (2001).
32. C. D. Young, G. Bersuker, Y. Zhao, J. J. Peterson, J. Barnett, G. A. Brown, J. H. Sim, R. Choi, B. H. Lee, and P. Zeitzoff, Microelectron. Reliab. 0026-2714 10.1016/j.microrel.2004.11.043 45, 806 (2005).
33. R. M. Tiggelaar, " Silicon-technology based microreactors for high-temperature heterogeneous partial oxidation reactions.," Ph.D. thesis, University of Twente, 2004.