Extraction of the characteristics of Si nanocrystals by the charge pumping technique

Nanotechnology

Volumn 23, Issue 8, 2012, Pages

  Diaz, R ^a   Grisolia, J ^a   BenAssayag, G ^a   Schamm Chardon, S ^a   Castro, C ^a   Pecassou, B ^a   Dimitrakis, P ^b   Normand, P ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; CHARGE PUMPING TECHNIQUE; DIRECT TUNNELING; EFFECTIVE DIAMETER; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; FUNCTION OF FREQUENCY; NON DESTRUCTIVE; QUANTITATIVE AGREEMENT; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SUBSTRATE SURFACE; TRAPPING CENTERS;

POWER CONVERTERS; TRANSMISSION ELECTRON MICROSCOPY;

NANOCRYSTALS;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; STATIC ELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; PARTICLE SIZE; SILICON; STATIC ELECTRICITY;

EID: 84856859269     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/8/085206     Document Type: Article

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