Effect of film microstructure on diffusion barrier properties of TaN x films in Cu metallization

Japanese Journal of Applied Physics

Volumn 47, Issue 8 PART 3, 2008, Pages 6953-6955

  Kim, Sung Man ^a   Lee, Gi Rak ^a   Lee, Jung Joong ^a  

^a Seoul National University   (South Korea)

Author keywords

Amorphous; Diffusion barrier; Inductively coupled plasma (ICP); Microstructure; Tantalum nitride (TaNx)

Indexed keywords

ANNEALING; COPPER; CRYSTAL GROWTH; DIFFUSION; DIFFUSION BARRIERS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INDUCTIVELY COUPLED PLASMA; MAGNETRON SPUTTERING; METAL ANALYSIS; MICROSTRUCTURE; NITRIDES; PHOTORESISTS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; TANNING; TANTALUM; TANTALUM COMPOUNDS; THICK FILMS; THIN FILMS; TRANSITION METALS;

AMORPHOUS; AMORPHOUS STRUCTURES; CU ATOMS; CU METALLIZATION; DC MAGNETRON SPUTTERING; DIFFUSION BARRIER PROPERTIES; DIFFUSION PATHS; FILM MICROSTRUCTURES; HIGHEST TEMPERATURES; SI SUBSTRATES; TANTALUM NITRIDE (TANX);

AMORPHOUS FILMS;

EID: 55149094960     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6953     Document Type: Article

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