Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 4, 2011, Pages 874-877

  Lu, Qian ^a   Zhang, Xin ^a   Zhu, Wei ^a   Zhou, Yongning ^a   Zhou, Qianfei ^a   Liu, Lilong ^a   Wu, Xiaojing ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

copper nitride; ion implantation; nonvolatile memories; resistive switching

Indexed keywords

ATOMIC FORCE MICROSCOPES; CONDUCTING FILAMENT; CONDUCTIVE FILAMENTS; COPPER NITRIDE; MEMORY DEVICE; METALLIC PHASIS; NITRIDE FILMS; NITRIDE THIN FILMS; NITROGEN CONCENTRATIONS; NON-VOLATILE MEMORIES; OPERATION VOLTAGE; PLASMA IMMERSION ION IMPLANTATION; RESISTANCE RATIO; RESISTIVE SWITCHING; SWITCHING BEHAVIORS;

FILM PREPARATION; ION IMPLANTATION; NITRIDES; SWITCHING; SWITCHING SYSTEMS; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER;

EID: 79954445633     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026680     Document Type: Article

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