Thermionic field emission in gold nitride Schottky nanodiodes

Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

  Spyropoulos Antonakakis, N ^a   Sarantopoulou, E ^a   Kollia, Z ^a   Samardzija Z ^b   Kobe, S ^b   Cefalas, A C ^a  

^a THEORETICAL AND PHYSICAL CHEMISTRY INSTITUTE   (Greece)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC CURRENTS; CONDUCTIVE ATOMIC FORCE MICROSCOPES; EFFECTIVE CONTACT; ELECTROSTATIC FORCE MICROSCOPY; FULL DEPLETION APPROXIMATION; GOLD LAYER; GOLD NITRIDE; I - V CURVE; INVERSION DOMAINS; LOWER LIMITS; MAIN CHARGE; MEMORY EFFECTS; METAL SEMICONDUCTOR METAL; METAL-SEMICONDUCTOR-METAL CONTACTS; METALLIC TIPS; MOLECULAR FLUORINE; NANO DOMAIN; NANOCONTACTS; NANODIODES; POOR STABILITY; SCHOTTKY; SCHOTTKY BARRIER MODELS; SEMICONDUCTING BEHAVIOR; SHIFT MAPPING; STORED CHARGE; THERMIONIC FIELD EMISSION;

ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; ELECTRON TUNNELING; FIELD EMISSION; LASERS; METALS; NITRIDES; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; TRANSPORT PROPERTIES;

GOLD;

EID: 84870948941     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4762012     Document Type: Article

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