Memristive characteristics in semiconductor/metal contacts tested by conductive atomic force microscopy

Journal of Physics D: Applied Physics

Volumn 44, Issue 47, 2011, Pages

  Wang, Wenhong ^a   Dong, Ruixin ^a   Yan, Xunling ^a   Yang, Bing ^a  

^a LIAOCHENG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AU FILM; CONDUCTING FILAMENT; CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONDUCTIVE ATOMIC FORCE MICROSCOPY; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; POSITIVE VOLTAGE; RESISTIVE SWITCHING; ZNO; ZNO FILMS;

GOLD; INTERFACES (MATERIALS); PLATINUM; SWITCHING SYSTEMS; TITANIUM NITRIDE; ZINC OXIDE;

ATOMIC FORCE MICROSCOPY;

EID: 81155151275     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/47/475102     Document Type: Article

References (26)

1. Chua L O 1971 IEEE Trans. Circuit Theory 18 507-19
2. Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80-3
3. Choi B J et al 2005 Appl. Phys. 98 033715
4. Xu N, Liu L F, Sun X, Chen C, Wang Y, Han D D, Liu X Y, Han R Q, Kang J F and Yu B 2008 Semicond. Sci. Technol. 23 075019
5. Tulina N A, Borisenko I Y and Sirotkin V V 2008 Phys. Lett. A 372 6681-6
6. Zhitenev N B, Sidorenko A, Tennant D M and Cirelli R A 2007 Nature Nanotechnol. 2 237-42
7. Plecenik A et al 2010 Appl. Surf. Sci. 256 5684-7
8. Scott J C and Bozano L D 2007 Adv. Mater. 19 1452-63
9. Bhadra R, Singh V N, Mehta B R and Datta P 2009 Chalcogenide Lett. 6 189-96
10. Liu X, Mayer M T and Wang D 2010 Appl. Phys. Lett. 96 223103
11. Yasuhara R, Fujiwara K, Horiba K, Kumigashira H, Kotsugi M, Oshima M and Takagi H 2009 Appl. Phys. Lett. 95 012110
12. Ielmini D, Nardi F, Cagli C and Lacaita A L 2010 IEEE Electron Device Lett. 31 353-5
13. Heluani S P, Braunstein G, Villafuerte M, Simonelli G and Duhalde S 2006 Thin Solid Films 515 2379-86
14. Villafuerte M, Heluani S P, Juarez G, Simonelli G, Braunstein G and Duhalde S 2007 Appl. Phys. Lett. 90 052105
15. Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F and Tsai M J 2008 Appl. Phys. Lett. 92 022110
16. Peng H Y, Li G P, Ye J Y, Wei Z P, Zhang Z, Wang D D, Xing G Z and Wu T 2010 Appl. Phys. Lett. 96 192113
17. Tour J M and He T 2008 Nature 453 42-3
18. Mandl M, Hoffmann H and Kucher P 1990 J. Appl. Phys. 68 2127-32
19. Waser R and Aono M 2007 Nature Mater. 6 833-40
20. Shima H, Zhong N and Akinaga H 2009 Appl. Phys. Lett. 94 082905
21. Chau T D, Bocarme T V and Kruse N 2004 Surf. Interface Anal. 36 528-32
22. Klesper G and Rollgen F W 1999 Surf. Sci. 422 107-17
23. Fors R, Khartsev S I and Grishin A M 2005 Phys. Rev. B 71 045305
24. Driscoll T, Kim H T, Chae B G, Ventra M D and Basov D N 2009 Appl. Phys. Lett. 95 043503
25. Pershin Y V and Ventra M D 2008 Phys. Rev. B 78 113309
26. Jo S H, Kim K H and Lu W 2009 Nano Lett. 9 870-4