Combined TiN- and TaN temperature compensated thin film resistors

Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 2162-2165

  Malmros, Anna ^a   Andersson, Kristoffer ^a   Rorsman, Niklas ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Tantalum nitride; Temperature Coefficient of Resistance; Thin Film Resistor; Titanium Nitride; Wheatstone bridge

Indexed keywords

BI-LAYER; DC CHARACTERIZATION; ON-CHIP TEMPERATURE; SHUNT CONFIGURATION; TANTALUM NITRIDES; TEMPERATURE COEFFICIENT OF RESISTANCE; TEMPERATURE COMPENSATION; TEMPERATURE RANGE; THIN FILM MATERIAL; THIN FILM RESISTOR; THIN FILM RESISTORS; WHEATSTONE BRIDGE; WHEATSTONE BRIDGES;

BRIDGE CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESISTORS; TANTALUM; TANTALUM COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; TINNING; TITANIUM; VAPOR DEPOSITION;

TITANIUM NITRIDE;

EID: 84855979593     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.09.050     Document Type: Article

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