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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

Oxygen incorporation and dipole variation in tantalum nitride film used as metal-gate electrode

(7) Lima, Lucas P B a Diniz, José A a Doi, Ioshiaki a Miyoshi, Juliana a Silva, Audrey R a Godoy Fo, José a Radtke, Claudio b

a UNIVERSITY OF CAMPINAS (Brazil)

b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; GATE DIELECTRICS; INTERFACES (MATERIALS); MOS CAPACITORS; OXYGEN; OXYGEN VACANCIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SINTERING; TANTALUM; WORK FUNCTION;

AIR EXPOSURE; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CONVENTIONAL FURNACE; CURRENT-VOLTAGE MEASUREMENTS; EFFECTIVE CHARGE; ELECTRICAL RESISTIVITY; FILM SURFACES; FLAT-BAND VOLTAGE; FORMING GAS; GATE ELECTRODES; I - V CURVE; I-V MEASUREMENTS; IDEALITY FACTORS; METAL GATE ELECTRODES; MOS TECHNOLOGY; N VACANCY; OXYGEN INCORPORATION; SCHOTTKY DIODES; SI (100) SUBSTRATE; TAN/SIO; TANTALUM NITRIDES; TANTALUM-NITRIDE FILM; XPS MEASUREMENTS;

TANTALUM COMPOUNDS;

EID: 84864196551 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4729599 Document Type: Article

Times cited : (3)

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