Photoluminescence intensity of GaN films with widely varying dislocation density

Journal of Materials Research

Volumn 18, Issue 5, 2003, Pages 1247-1250

  Sun, Yue Jun ^a   Brandt, Oliver ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

EDGE DISLOCATION DENSITIES;

GALLIUM NITRIDE;

EID: 0037662215     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2003.0171     Document Type: Article

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