Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN

Journal of Crystal Growth

Volumn 249, Issue 3-4, 2003, Pages 455-460

  Park, Seong Eun ^a   Byungsung, O B ^a   Lee, Cheul Ro ^b  

^a Chungnam National University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

A1. High resolution X ray diffraction; A1. Stresses; A1. X ray topography; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; STRESSES; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL FILMS;

EPITAXIAL GROWTH;

EID: 0037363362     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02244-3     Document Type: Article

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