The fabrication of GaN-based light emitting diodes (LEDs)

Advances in Natural Sciences: Nanoscience and Nanotechnology

Volumn 1, Issue 2, 2010, Pages

  Nguyen, Xu Lin ^a   Nguyen, Thi Ngoc Nhien ^a   Chau, Vinh Thang ^a   Dang, Mau Chien ^a  

^a VIETNAM NATIONAL UNIVERSITY   (Viet Nam)

Author keywords

InGaN GaN; LED fabrication; LED packaging; LED structure; White LED

Indexed keywords

ALUMINUM COMPOUNDS; CERIUM COMPOUNDS; CHIP SCALE PACKAGES; COATINGS; ETCHING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHTING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; YTTRIUM ALUMINUM GARNET;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); GAN-BASED LIGHT-EMITTING DIODES; INGAN/GAN; LED PACKAGING; LED STRUCTURE; MICRO-FABRICATION TECHNIQUES; SAPPHIRE SUBSTRATES; WHITE LED;

FABRICATION;

EID: 84894138567     PISSN: None     EISSN: 20436262     Source Type: Journal    
DOI: 10.1088/2043-6254/1/2/025015     Document Type: Article

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