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Applied Physics A: Materials Science and Processing

Volumn 94, Issue 1, 2009, Pages 73-82

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

(6) Arslan, Engin a Ozturk, Mustafa K b,c Duygulu, Özgür d Kaya, Ali Arslan e Ozcelik, Suleyman b Ozbay, Ekmel a

a BILKENT UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

c GENERAL DIRECTORATE OF MINERAL RESEARCH AND EXPLORATION (Turkey)

d MATERIALS INSTITUTE (Turkey)

e MUGLA SITKI KOCMAN UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; COHERENT LIGHT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; NITRIDATION; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SILICON; SILICON NITRIDE;

COHERENCE LENGTHS; CORRELATION LENGTHS; CRYSTALLINE QUALITIES; DISLOCATION DENSITIES; EDGE DISLOCATION DENSITIES; EFFECT OF IN; GAN FILMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM; METAL ORGANIC; MONOTONICALLY; MOSAIC BLOCKS; MOSAIC STRUCTURES; NITRIDATION TIMES; ROTATIONAL DISORDERS; SCATTERING GEOMETRIES; SCREW TYPES; SECTIONAL VIEWS; SI(111) SUBSTRATES; SILICON NITRIDE (SIN; STRUCTURAL CHARACTERISTICS; SUBSTRATE NITRIDATION; THIN BUFFER LAYERS; VERTICAL COHERENCES; X-RAY DIFFRACTIONS;

SUBSTRATES;

EID: 56349147364 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4939-7 Document Type: Article

Times cited : (31)

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