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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 2, 2010, Pages 185-191

Structural analysis of an InGaN/GaN based light emitting diode by X-ray diffraction

(6) Ozturk M K a,b Hongbo, Yu c Sarikavak B d Korcak S a Ozcelik S a Ozbay E c

a GAZI UNIVERSITY (Turkey)

b GENERAL DIRECTORATE OF MINERAL RESEARCH AND EXPLORATION (Turkey)

c BILKENT UNIVERSITY (Turkey)

d KASTAMONU UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM COMPOUNDS; LASER OPTICS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCREW DISLOCATIONS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION;

BRAGG REFLECTION; COHERENCE LENGTHS; CRYSTAL DIRECTION; HIGH RESOLUTION X RAY DIFFRACTION; INGAN/GAN MULTI-QUANTUM WELL; MOSAIC STRUCTURE; STRUCTURAL CHARACTERISTICS; THREADING DISLOCATION DENSITIES;

EDGE DISLOCATIONS;

EID: 77949261627 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-009-9891-6 Document Type: Article

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.