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IEEE Photonics Technology Letters

Volumn 21, Issue 19, 2009, Pages 1429-1431

A reliability study on green InGaN-GaN light-emitting diodes

(3) Li, Z L a Lai, P T a Choi, H W a

a UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

Light emitting diode (LED); Reliability

Indexed keywords

1/F NOISE; DEGRADATION RATE; DEVICE LIFETIME; DEVICE PARAMETERS; GAN LIGHT-EMITTING DIODES; GREEN LEDS; INDIUM CONTENT; LIGHT-EMITTING DIODE (LED); NOISE MAGNITUDE; QUANTUM WELL;

CURRENT DENSITY; DEFECT DENSITY; DEGRADATION; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; RELIABILITY; SEMICONDUCTING GALLIUM;

LIGHT EMITTING DIODES;

EID: 70349588448 PISSN: 10411135 EISSN: None Source Type: Journal
DOI: 10.1109/LPT.2009.2028155 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.